Submicrometer Epsilon-Near-Zero Electroabsorption Modulators Enabled by High-Mobility Cadmium Oxide

被引：1

作者：

Campione S. ^{[1
]}

Wood M.G. ^{[1
]}

Serkland D.K. ^{[1
]}

Parameswaran S. ^{[1
]}

Ihlefeld J. ^{[1
]}

Luk T.S. ^{[1
]}

Wendt J.R. ^{[1
]}

Geib K.M. ^{[1
]}

Keeler G.A. ^{[1
]}

机构：

[1] Sandia National Laboratories, Albuquerque, 87185, NM

来源：

Campione, Salvatore (sncampi@sandia.gov) | 1600年 / Institute of Electrical and Electronics Engineers Inc., United States卷 / 09期

关键词：

cadmium oxide; Epsilon-near-zero; high-mobility materials; near-infrared; sub-micrometer electroabsorption modulator; transparent conducting oxides;

D O I：

10.1109/JPHOT.2017.2723299

中图分类号：

学科分类号：

摘要：

Epsilon-near-zero materials provide a new path for tailoring light-matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The nonresonant modulator operates through field-effect carrier density tuning. We compare the performance of modulators composed of two different conducting oxides, namely, indium oxide (In2O3) and cadmium oxide (CdO), and show that better modulation performance is achieved when using high-mobility (i.e., low loss) epsilon-near-zero materials such as CdO. In particular, we show that nonresonant electroabsorption modulators with submicron lengths and greater than 5 dB extinction ratios may be achieved through the proper selection of high-mobility transparent conducting oxides, opening a path for device miniaturization and increased modulation depth. © 2017 IEEE.

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