共 6 条
- [1] IMPURITY CONTAMINATION OF THE SIO2 LAYER ON SI WAFERS DURING ION ETCHING JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 17 - 22
- [2] Effects of Si layer thickness on solid-phase crystallization of stacked Ge/Si/SiO2 structures Jpn. J. Appl. Phys., 1600, 3 PART 3
- [3] SiO2 formation in carburized layer of Fe-3%Si alloy and its property Li, Y.-X. (liyanxia78@163.com), 1600, Editorial Office of Transactions of Materials, 18 Xueqing Road, Beijing, 100083, China (34):
- [4] Effect of SiO2 (1.2 μm)/Ti-foil substrate nitridation on GaN thin films grown by reactive evaporation method Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 (8448-8450):
- [5] Solid-source doping by using phosphosilicate glass into p-type bulk Si (100) substrate: Role of the capping SiO2 barrier JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (06):
- [6] Evaluation of the alignment of liquid crystal molecules on SiO2 alignment layer by attenuated total reflection method utilizing surface plasmon and guided wave excitation modes IEEJ Trans. Fundam. Mater., 2 (193-197):