Voltammetric characterization for the growth of oxide films formed on copper in air

被引：0

作者：

Nakayama, Shigeyoshi ^{[1
]}

Shibata, Masahiro ^{[1
]}

Kuwabata, Susumu ^{[2
]}

Osakai, Toshiyuki ^{[3
]}

Notoya, Takenori ^{[4
]}

机构：

[1] Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1-1-3, Shimaya, Konohana-ku, Osaka 554-0024, Japan

[2] Department of Materials Chemistry, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita 565-0871, Japan

[3] Department of Chemistry, Faculty of Science, Kobe University, 1-2-1, Tsurukabuto, Nada-ku, Kobe 657-8501, Japan

[4] Molecular Science Division, Graduate School of Engineering, Hokkaido University, 13-8, Kita, Kita-ku, Sapporo 060-8628, Japan

来源：

Zairyo to Kankyo/ Corrosion Engineering | 2002年 / 51卷 / 12期

关键词：

Copper compounds - Corrosion - Cyclic voltammetry - Electrolytes - Oxidation - Reaction kinetics;

D O I：

10.3323/jcorr1991.51.566

中图分类号：

学科分类号：

摘要：

The growth mechanisms of oxide films thermally formed on copper have been studied using double sweep cyclic voltammetry in strongly alkaline electrolytes. It was found that an electrolyte of 6M KOH + 1M LiOH allowed perfect resolution of cathodic waves due to the reduction of Cu2O and CuO. The effect of the types of anion on copper oxidation mechanism was investigated in many factors of corrosion. C opper sheets were prepared by pre immersion in various electrolytes of sodium salt, followed by heating in air at 80°C and 90% RH. The formation kinetics of each oxide films followed the parabolic rate law with a few exceptions. These were confirmed that the formation of the oxide films was accelerated with the increase of ions on copper and that the oxidation rate of Cu2O or CuO was controlled by the types of anion.

引用

页码：566 / 570

共 50 条

[21] Electrochemical investigation of copper oxide films formed by oxygen plasma treatment
N. BELLAKHAL
K. DRAOU
J. L. BRISSET
Journal of Applied Electrochemistry, 1997, 27 : 414 - 421
[22] THE STRUCTURE OF OXIDE FILMS FORMED ON SMOOTH FACES OF A SINGLE CRYSTAL OF COPPER
HARRIS, WW
BALL, FL
GWATHMEY, AT
ACTA METALLURGICA, 1957, 5 (10): : 574 - 581
[23] CONSIDERATIONS OF THE PH-DEPENDENCE OF HYDROUS OXIDE-FILMS FORMED ON IRIDIUM BY VOLTAMMETRIC CYCLING
HITCHMAN, ML
RAMANATHAN, S
ELECTROANALYSIS, 1992, 4 (03) : 291 - 297
[24] THE OXIDE FILMS FORMED ON COPPER SINGLE CRYSTAL SURFACES IN WATER .2. RATE OF GROWTH AT ROOM TEMPERATURE
KRUGER, J
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (06) : 503 - 509
[25] NUCLEATION AND ORIENTED GROWTH OF CHEMICALLY FORMED SULPHIDE AND OXIDE FILMS
HECHT, G
HERBERGER, J
WEISSMANTEL, C
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (05): : 547 - +
[26] Linking Dynamics of Growth of Copper Oxide Nanostructures in Air
Breus, Andrii
Abashin, Sergey
Serdiuk, Oleksii
Baranov, Oleg
INTEGRATED COMPUTER TECHNOLOGIES IN MECHANICAL ENGINEERING - 2021, 2022, 367 : 555 - 564
[27] Electronic Structure and Growth of Electrochemically Formed Iridium Oxide Films
Ilyukhina, Liudmila
Sunde, Svein
Haverkamp, Richard G.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2017, 164 (14) : F1662 - F1670
[28] THE GROWTH AND TRANSPORT IN THERMAL OXIDE-FILMS FORMED ON SILICON
HUSSEY, RJ
BISAILLION, DA
SPROULE, GI
GRAHAM, MJ
CORROSION SCIENCE, 1993, 35 (5-8) : 917 - 921
[29] NUCLEATION AND EPITAXIAL GROWTH OF CHEMICALLY FORMED SULPHIDE AND OXIDE FILMS
HECHT, G
HERBERGER, J
WEISSMANTEL, C
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 548 - +
[30] Growth and characterization of thin anodic oxide films on n-InSb(100) formed in aqueous solutions
Santinacci, L
Sproule, GI
Moisa, S
Landheer, D
Wu, X
Banu, A
Djenizian, T
Schmuki, P
Graham, MJ
CORROSION SCIENCE, 2004, 46 (08) : 2067 - 2079

← 1 2 3 4 5 →