MEMS based monolithic phased array using 3-bit switched-line phase shifter

被引：0
作者：
Karmakar A. [1 ,2 ]
Roy B. [1 ]
Bhattacharjee A.K. [1 ]
机构：
[1] Department of Electronics & Communication Engineering, N.I.T., Durgapur, West Bengal
[2] Semi-Conductor Laboratory, Dept. of Space, Govt. of India, S.A.S Nagar, Mohali, Punjab
来源：
| 1600年 / Advanced Electromagnetics卷 / 06期
关键词：
CPW-MS transition; MEMS; Phase shifter; Phased array;
D O I：
10.7716/aem.v6i4.520
中图分类号：
学科分类号：
摘要：
This article details the design of an electronically scanning phased array antenna with proposed fabrication process steps. Structure is based upon RF micro-electromechanical system (MEMS) technology. Capacitive type shunt switches have been implemented here to cater high frequency operation. The architecture, which is deigned at 30 GHz, consists of 3-bit (11.25°, 22.5° & 45°) integrated Switched-line phase shifter and a linearly polarized microstrip patch antenna. Detailed design tricks of the Ka-band phase shifter is outlined here. The whole design is targeted for future monolithic integration. So, the substrate of choice is High Resistive Silicon (ρ > 8kO-cm, tan δ =0.01 and εr =11.8). The overall circuit occupies an cross-sectional area of 20 × 5 mm2. The simulated results show that the phase shifter can provide nearly 11.25°/22.5°/45° phase shifts and their combinations at the expense of 1dB average insertion loss at 30 GHz for eight combinations. Practical fabrication process flow using surface micromachining is proposed here. Critical dimensions of the phased array structure is governed by the deign rules of the standard CMOS/MEMS foundry. © 2017, Advanced Electromagnetics. All rights reserved.
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页码：27 / 35
页数：8
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