Properties of Cd1-xZnxTe films deposited by magnetron co-sputtering

Cd1-xZnxTe crystalline thin films were deposited by magnetron co-sputtering with ZnTe and CdTe targets at different temperatures, pressure and sputtering power. The properties of films were characterized by SEM, XRD and XRF to investigate the structure, composition and surface morphology. The optical and electrical properties of the films were also investigated. The results showed that the films prepared at 300°C were cubic phase with a dense surface and an average particle size of about 50 nm. A linear relationship was obtained between Zn composition and lattice constant as well as Zn composition and the band gap of the film. With the decrease of the pressure from 8 to 1 Pa the grain size increased and a denser surface was appeared. The as-deposited Cd1-xZnxTe polycrystalline films showed weak p-type conduction with the conductivity of about 8.61×10-11(Ω·cm)-1 at room temperature.