Enhancement of the bandwidth of p-i-n photodiodes by utilizing tandem structures

被引：0
|
作者：
Kakinuma, H. [1 ]
机构：
[1] Advanced Devices Laboratory, R and D Group, Oki Electric Industry Co., Ltd., 550-5 Higashiasakawa-cho, Hachioji, Tokyo 193-8550, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 4 A期
关键词：
Bandwidth - Charge carriers - Lighting - Optical communication - Photosensitivity;
D O I：
10.1143/jjap.40.2310
中图分类号：
学科分类号：
摘要：
We propose a new method of increasing the maximum 3dB-bandwidth of InGaAs/InP p-i-n photodiodes for optical communication applications. It is demonstrated by calculation that employing tandem structures (p-i-n)N (N ≥ 2) enhances the maximum 3dB-bandwidth by a factor of √N after optimizing the i-layer thickness for the side illumination case, although the photosensitivity decreases by a factor of N. Conditions imposed on the i-layer thickness for complete carrier recombination in the intermediate n-p junctions are derived.
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页码：2310 / 2311
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