The transport phenomena during the growth of ZnTe crystal by the temperature gradient solution growth technique

被引：0
作者：
Yin L. [1 ,2 ]
Jie W. [1 ,2 ]
Wang T. [1 ,2 ]
Zhou B. [1 ,2 ]
Yang F. [1 ,2 ]
机构：
[1] State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an
[2] Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology
来源：
Journal of Crystal Growth | 2017年 / 461卷
基金：
中国国家自然科学基金;
关键词：
A1. Computer simulation; A1. Mass transfer; A2. Growth from high temperature solutions; A2. Single crystal growth; B2. Semiconducting II-VI materials; B3. Terahertz devices;
D O I：
10.1016/j.jcrysgro.2016.11.074
中图分类号：
学科分类号：
摘要：
A numerical model is developed to simulate the temperature field, the thermosolutal convection, the solute segregation and the growth interface morphology during the growth of ZnTe crystal from Te rich solution by the temperature gradient solution growth (TGSG) technique. Effects of the temperature gradient on the transport phenomena, the growth interface morphology and the growth rate are examined. The influences of the latent heat and the thermal conductivity of ZnTe crystal on the transport phenomena and the growth interface are also discussed. We find that the mass transfer of ZnTe in the solution is very slow because of the low diffusion coefficient and the lack of mixing in the lower part of the solution. During the growth, dilute solution with high density and low growth temperature accumulates in the central region of the growth interface, making the growth interface change into two distinct parts. The inner part is very concave, while the outer part is relatively flat. Growth conditions in front of the two parts of the growth interface are different. The crystalline quality of the inner part of the ingot is predicted to be worse than that of the outer part. High temperature gradient can significantly increase the growth rate, and avoid the diffusion controlled growth to some extent. © 2017 Elsevier B.V.
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页码：16 / 24
页数：8
相关论文
共 35 条
  • [1] Yoshino K., Yoneta M., Ohmori K., Et al., Annealing effects of a high-quality ZnTe substrate, J. Electron. Mater., 33, 6, pp. 579-582, (2004)
  • [2] Traversa M., Lovergine N., Prete P., Et al., Homoepitaxy of ZnTe on (100) oriented substrates: technology issues and MOVPE growth aspects, Cryst. Res. Technol., 40, 10-11, pp. 1003-1010, (2005)
  • [3] Kaneta A., Adachi S., Photoreflectance study in the E1 and E1+Δ1 transition regions of ZnTe, J. Phys. D: Appl. Phys., 33, pp. 901-905, (2000)
  • [4] Rusu G.I., Prepelita P., Apetroaei N., Et al., On the electronic transport and optical properties of ZnTe thin films, J. Optoelectron. Adv. Mater., 7, pp. 829-835, (2005)
  • [5] Blanchard F., Razzari L., Bandulet H.C., Et al., Generation of 1.5 μJ single-cycle terahertz pulses by optical rectification from a large aperture ZnTe crystal, Opt. Express, 15, 20, pp. 13212-13220, (2007)
  • [6] Ferguson B., Zhang X.C., Materials for terahertz science and technology, Nat. Mater., 1, 1, pp. 26-33, (2002)
  • [7] Asahi T., Arakawa A., Sato K., Growth of large-diameter ZnTe single crystals by the vertical gradient freezing method, J. Cryst. Growth, 229, pp. 74-78, (2001)
  • [8] Asahi T., Yabe T., Sato K., Et al., Growth of large diameter ZnTe single crystals by the LEK method, J. Alloy. Compd., 371, 1, pp. 2-5, (2004)
  • [9] Shkir M., Bhagavannarayana G., Wahab M.A., Et al., Characterization of ZnTe single crystal grown by Vertical Bridgman Technique using two zone tubular furnace: an important material for optoelectronic devices, Optik, 124, pp. 1995-1999, (2013)
  • [10] Asahi T., Sato K., Growth of large diameter ZnTe single crystals by the double crucible liquid encapsulated pulling method, Phys. Stat. Sol. (C), 11, 7-8, pp. 1167-1173, (2014)
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