The aerosol deposition method (ADM) is the unique thick film technology based on consolidification by impacting powder particles on a substrate. We prepared a powder of a relaxor ferroelectric material with the composition 0.5Pb(Ni1/3Nb2/3)O3-0.5Pb(Zr 0.3Ti0.7)O3 (PNN-PZT) using a solid state reaction process. A PNN-PZT film 10 μm thick was deposited on a YSZ (3 mol % Y2O3-stabilized ZrO2) substrate at room temperature by ADM. The prepared films were annealed from 600 to 900°C to investigate the annealing effect. The PNN-PZT film showed a pure perovskite phase without pyrochlore. As a result of transmission electron microscope (TEM) observation, the mean grain sizes of films annealed at 600 and 850°C were measured to be 83 and 254 nm, respectively. After annealing at 850°C, the values of the piezoelectric constant d31 and the dielectric constant at 1 kHz of the PNN-PZT film were measured to be - 164pm/V and 2530, respectively. © 2005 The Japan Society of Applied Physics.