Plasma-Chemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium

被引：0

作者：

Murin, D.B. ^{[1
]}

Chesnokov, I.A. ^{[1
]}

Gogulev, I.A. ^{[1
]}

Anokhin, A.L. ^{[1
]}

Moloskin, A.E. ^{[1
]}

机构：

[1] Ivanovo State University of Chemistry and Technology, Ivanovo

来源：

Russian Microelectronics | 2024年 / 53卷 / 04期

关键词：

difluorodichloromethane; etching; gallium arsenide; helium; kinetics; plasma; radiation intensity;

D O I：

10.1134/S1063739724600171

中图分类号：

学科分类号：

摘要：

Abstract: The kinetics of the interaction of high-frequency plasma of difluorodichloromethane and its mixture with helium with the surface of gallium arsenide (GaAs) is experimentally studied. It is established that in the studied range of conditions, the original difluorodichloromethane molecule completely decomposed into atomic carbon. It is confirmed that the main chemically active particles responsible for etching are reactive chlorine atoms. It is shown that the etching process occurs in the mode of an ion-stimulated chemical reaction, where the desorption of products under the influence of ion bombardment plays a significant role in cleaning the surface. The emission spectra of plasma radiation in the presence of a GaAs semiconductor wafer are analyzed. The control lines and bands are selected to control the rate of the etching process based on the emission intensity of the lines and bands of the etching products. © Pleiades Publishing, Ltd. 2024. ISSN 1063-7397, Russian Microelectronics, 2024, Vol. 53, No. 4, pp. 349–354. Pleiades Publishing, Ltd., 2024.

引用

页码：349 / 354

页数：5

共 15 条

[1]

Danilin B.S., Kireev V.Y., Primenenie Nizkotemperaturnoi Plazmy Dlya Travleniya I Ochistki Materialov (Application of Low Temperature Plasma for Grinding and Cleaning of Materials), (1987)

[2]

Dunaev A.V., Sitanov D.V., Murin D.B., General features of interaction between copper and chlorine-containing gases, High Energy Chem, 51, pp. 224-228, (2017)

[3]

Franz G., Kelp A., Messerer P., Analysis of chlorine-containing plasmas applied in III/V semiconductor processing, J. Vac. Sci. Technol. A, 18, pp. 2053-2061, (2000)

[4]

Ibbotson D.E., Plasma and gaseous etching of compounds of Groups III–V, Pure Appl. Chem, 60, pp. 703-708, (1988)

[5]

Efremov A.M., Svettsov V.I., Pivovarenok S.A., Dunaev A.V., Kinetics of GaAs etching in chlorine plasma, Izv Vyssh. Uchebn. Zaved, Khim. Khim. Tekhnol, 53, pp. 53-56, (2010)

[6]

Grigonis A., The surface composition of GaAs affected by reactive plasma, Surf. Coat. Technol, 110, pp. 31-34, (1998)

[7]

Efremov A.M., Murin D.B., Leventsov A.E., Kinetics and modes of plasmachemical etching of GaAs under conditions of induction HF discharge in CF2Cl2, Russ. Microelectron, 43, pp. 401-406, (2014)

[8]

Pearse R.W.B., Gaydon A.G., The Identification of Molecular Spectra, (1976)

[9]

Striganov A.R., Sventitskii N.S., Tablitsy spektral’nykh Linii neitral’nykh I Ionizirovannykh Atomov (Tables of Spectral Lines of Neutral and Ionized Atoms), (1966)

[10]

Wang Y.-F., Lee W.-J., Chen C.-Y., Wu, Yo-P.G., and Chang-Chien, G.-P., Reaction mechanisms in both a CCl2F2/O2/Ar and a CCl2F2/H2/Ar RF plasma environment, Plasma Chem. Plasma Process, 20, pp. 469-494, (2000)

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