Deposition of diamond-like carbon using compact electron-beam-excited plasma source

被引：0

作者：

Tada, Shigekazu ^{[1
]}

Ito, Masafumi ^{[1
]}

Hamagaki, Manabu ^{[2
]}

Hori, Masaru ^{[3
]}

Goto, Toshio ^{[2
]}

机构：

[1] Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

[2] Faculty of System Engineering, Wakayama University, 930 Sakaetani, Wakayama 640-8510, Japan

[3] Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

来源：

| 1600年 / Japan Society of Applied Physics卷 / 41期

关键词：

Amorphous films - Deposition - Electric potential - Electron beams - Ethylene - Ion bombardment - Ions - Optimization - Plasma sources - Substrates - Synthesis (chemical) - Toluene;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have deposited hydrogenated amorphous carbon (a-C:H) films called diamond-like carbon (DLC) on an electrically floating disk using a compact electron-beam-excited plasma (EBEP) employing toluene and ethylene as feed gases. Since the EBEP source enables us to control the ion sheath bias on the floating substrate by changing the electron-beam energy, the substrate ion bombardment energy needed to form the DLC film can be determined without applying an additional bias power supply such as RF. The relationship among the DLC film properties, the deposition rate and the electron-beam acceleration voltage for both feed gases has been investigated. In order to achieve uniform deposition on a disk of 80 mm diameter, the optimization of the compact EBEP source has been examined as well. A high-quality DLC film with good film uniformity on the disk was synthesized at high acceleration voltage employing toluene gas.

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