Study on high-power laser diodes as pumping source at high operating temperature

被引：1

作者：

Chen H. ^{[1
]}

Che X. ^{[1
]}

Xu H. ^{[1
]}

Zhang S. ^{[1
]}

Lin L. ^{[1
]}

Ren Y. ^{[1
]}

An Z. ^{[1
]}

机构：

[1] The 13th Research Institute, China Electronics Technology Group Corporation, Shijiazhuang

来源：

Zhongguo Jiguang/Chinese Journal of Lasers | 2010年 / 37卷 / 11期

关键词：

Characteristic temperature; High operating temperature; High-power laser diode; Integrative soldering; Lasers;

D O I：

10.3788/CJL20103711.2799

中图分类号：

学科分类号：

摘要：

Based on the theoretical analysis for the influence of operating temperature on the operating wavelength electro-optical conversion efficiency and lifetime of the device, the high-power 808 nm quasi-continuous wave (QCW) laser diode array was fabricated with the technology of wavelength compensating, Al-free active region epitaxial material with high characteristic temperature and integrative soldering. When the heat sink temperature was 70 °C, a CW output power of 65 W of a single bar was achieved at a driving current of 80 A. A characteristic temperature of a single bar in the range of 20 °C~70 °C was estimated to be about 145 K. Under quasi-continuous wave (2% duty factor) operation condition, the laser diode array stacked with 10 bars achieved an electro-optical conversion efficiency of 53%, and a lifetime in excess of 109 shots.

引用

页码：2799 / 2802

页数：3

共 10 条

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