Quantum, power, and compound semiconductors devices -III-V MOSFETs with high K dielectrics

被引：0
|
作者：
Fay, Patrick [1 ]
Kizilyalli, Isik [2 ]
机构：
[1] University of Notre Dame
[2] ALTA Devices
来源：
Technical Digest - International Electron Devices Meeting, IEDM | 2008年
关键词：
D O I：
10.1109/IEDM.2008.4796694
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Quantum devices based on III-V compound semiconductors
    Hasegawa, H
    Fujikura, H
    Okada, H
    PHYSICS AND APPLICATIONS OF SEMICONDUCTOR QUANTUM STRUCTURES, 2001, : 387 - 432
  • [2] High-k Dielectrics for Ge, III-V and Graphene MOSFETs
    Banerjee, S.
    Tutuc, E.
    Kim, S.
    Akyol, T.
    Jamil, M.
    Shahrjerdi, D.
    Donnelly, J.
    Colombo, L.
    PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7, 2009, 25 (06): : 285 - 299
  • [3] DIELECTRICS FOR ANNEALING OF ION-IMPLANTED III-V COMPOUND SEMICONDUCTORS
    SINGH, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C350 - C350
  • [4] Heteroepitaxial growth of III-V compound semiconductors for optoelectronic devices
    Egawa, T
    Ishikawa, H
    Jimbo, T
    Umeno, M
    BULLETIN OF MATERIALS SCIENCE, 1999, 22 (03) : 363 - 367
  • [5] Heteroepitaxial growth of III-V compound semiconductors for optoelectronic devices
    Res. Ctr. of Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
    不详
    Bull Mater Sci, 3 (363-367):
  • [6] Advances in high κ gate dielectrics for Si and III-V semiconductors
    Kwo, J
    Hong, M
    Busch, B
    Muller, DA
    Chabal, YJ
    Kortan, AR
    Mannaerts, JP
    Yang, B
    Ye, P
    Gossmann, H
    Sergent, AM
    Ng, KK
    Bude, J
    Schulte, WH
    Garfunkel, E
    Gustafsson, T
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 645 - 650
  • [7] FABRICATION AND STUDY OF VARIOUS CHARACTERISTICS OF HIGH PERFORMANCE III-V MOSFETS WITH HIGH-K DIELECTRICS
    Shree, Shweta
    Pancholi, Umesh Chandra
    2017 INTERNATIONAL CONFERENCE ON ADVANCES IN COMPUTING, COMMUNICATIONS AND INFORMATICS (ICACCI), 2017, : 338 - 343
  • [8] PASSIVATION OF III-V COMPOUND SEMICONDUCTORS
    VIKTOROVITCH, P
    REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (09): : 895 - 914
  • [9] ON THE OXIDATION OF III-V COMPOUND SEMICONDUCTORS
    MONCH, W
    SURFACE SCIENCE, 1986, 168 (1-3) : 577 - 593
  • [10] STUDIES ON III-V COMPOUND SEMICONDUCTORS
    KRANZER, D
    ZIMMERL, O
    HILLBRAND, H
    POTZL, H
    ACTA PHYSICA AUSTRIACA, 1972, 35 (1-2): : 110 - +
12345