Molecular dynamics simulation of evolution of defect and temperature effect in irradiated 3C-SiC

被引：0

作者：

Ma X.-Q. ^{[1
]}

Yuan D.-Q. ^{[1
]}

Xia H.-H. ^{[2
]}

Fan P. ^{[1
]}

Zhang Q.-L. ^{[1
]}

Zuo Y. ^{[1
]}

Aerken A. ^{[3
]}

Zhu S.-Y. ^{[1
]}

机构：

[1] China Institute of Atomic Energy, P.O. Box 275-50, Beijing

[2] State Nuclear Power Research Institute, Beijing

[3] College of Physics Science and Technology, Xinjiang University, Urumqi

来源：

Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | 2016年 / 50卷 / 02期

关键词：

3C-SiC; Defect; Displacement cascade; Molecular dynamics; Temperature effect;

D O I：

10.7538/yzk.2016.50.02.0219

中图分类号：

学科分类号：

摘要：

In this paper, the molecular dynamics method was used to simulate the displacement cascade of 3C-SiC by using LAMMPS code. The evolution of simulated radiation-induced point defects by the displacement cascade was studied at different PKA initial directions and energy. The results show that the vacancy number is irrespective with the initial direction of PKA, and the linear relationship exists between the vacancy number and PKA energy. The variations of the transient temperature distribution and thermal spikes were investigated during displacement cascade. Through analysis, a high temperature region produces during displacement cascade. The size of this region changing with time is not dependent on the PKA energy. © 2016, Editorial Board of Atomic Energy Science and Technology. All right reserved.

引用

页码：219 / 226

页数：7

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