Room-temperature observation of size effects in photoluminescence of Si0.8Ge0.2/Si nanocolumns prepared by neutral beam etching

被引：0
|
作者：
School of Fundamental Science and Technology and CREST-JST, Keio University, Yokohama 223-8522, Japan [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
不详 [5 ]
机构：
来源：
Appl. Phys. Express | 1882年 / 8卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 40 条
  • [1] Room-Temperature Observation of Size Effects in Photoluminescence of Si0.8Ge0.2/Si Nanocolumns Prepared by Neutral Beam Etching
    Hirano, Rii
    Miyamoto, Satoru
    Yonemoto, Masahiro
    Samukawa, Seiji
    Sawano, Kentarou
    Shiraki, Yasuhiro
    Itoh, Kohei M.
    APPLIED PHYSICS EXPRESS, 2012, 5 (08)
  • [2] Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer
    Kil, Yeon-Ho
    Yang, Jong-Han
    Kang, Sukil
    Jeong, Tae Soo
    Kim, Taek Sung
    Shim, Kyu-Hwan
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13 (06) : 668 - 675
  • [3] Effects of annealing temperature on the characteristics of solicate/HfO2 insulator formed on the p-Si/Si0.8Ge0.2 and p-Si/Si0.8Ge0.2/intrinsic-Si (20A) substrates
    Jeong, SH
    Roh, Y
    Lee, NE
    Yang, CW
    SURFACE & COATINGS TECHNOLOGY, 2005, 200 (1-4) : 258 - 263
  • [4] Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films
    Chang, Yuan-Ming
    Dai, Ching-Liang
    Cheng, Tsung-Chieh
    Hsu, Che-Wei
    APPLIED SURFACE SCIENCE, 2008, 254 (10) : 3105 - 3109
  • [5] Study of dislocations in strained-Si/Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniques
    Yuan, XL
    Sekiguchi, T
    Ri, SG
    Ito, S
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3) : 337 - 340
  • [6] Growth and defect formation in thin Ge and Si0.8Ge0.2 layers ion beam sputter deposited on Si(001)
    Dorsch, W
    Demuth, V
    Strunk, HP
    Mosleh, N
    Meyer, F
    Schwebel, C
    POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY, 1996, 51-5 : 193 - 198
  • [7] Microstructure evolution effects of helium redistribution in as-implanted silicon and Si0.8Ge0.2/Si heterostructues
    Mörschbächer, MJ
    da Silva, DL
    Fichtner, PFP
    Oliviero, E
    Behar, M
    Zawislak, FC
    Holländer, B
    Luysberg, M
    Mantl, S
    Loo, R
    Caymax, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 219 : 703 - 707
  • [8] Annealing effects on mobility-limiting mechanisms in modulation doping Si/Si0.8Ge0.2 heterostructures
    Ueno, T
    Yutani, A
    Shiraki, Y
    Nakagawa, K
    SUPERLATTICES AND MICROSTRUCTURES, 1999, 25 (1-2) : 319 - 324
  • [9] OBSERVATION OF NOVEL TRANSPORT PHENOMENA IN A SI0.8GE0.2 2-DIMENSIONAL HOLE GAS
    EMELEUS, CJ
    WHALL, TE
    SMITH, DW
    MATTEY, NL
    KUBIAK, RA
    PARKER, EHC
    KEARNEY, MJ
    PHYSICAL REVIEW B, 1993, 47 (15): : 10016 - 10019
  • [10] Detection of misfit dislocations at interface of strained Si/Si0.8Ge0.2 by electron-beam-induced current technique
    Yuan, XL
    Sekiguchi, T
    Ri, SG
    Ito, S
    APPLIED PHYSICS LETTERS, 2004, 84 (17) : 3316 - 3318
1234