Kr-Plasma Process for Conductance Control of MFSFET With FeND-HfO2 Gate Insulator

被引：0

作者：

Ohmi, S. ^{[1
]}

Tanuma, M. ^{[1
]}

Shin, J. W. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Yokohama 2268502, Japan

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2024年 / 12卷

关键词：

Hafnium oxide; nondoped; ferroelectrics; MFSFET; Kr-plasma; threshold voltage; conductance; DEPOSITION;

D O I：

10.1109/JEDS.2024.3462930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we have investigated the conductance control of the metal-ferroelectrics-Si field-effect transistor (MFSFET) utilizing 5 nm thick ferroelectric nondoped HfO2 (FeND-HfO2) gate insulator. The Kr-plasma process is effective to decrease the plasma damage compared to the Ar-plasma process during the in-situ deposition of FeND-HfO2 and Pt gate electrode by RF-magnetron sputtering. The precise control such as less than 20 mV was realized which led to the conductance control for 10 states from 0 to 0.6 mu S/mu m both for potentiation and depression operations with the input pulses of +/- 3 V/100 ns.

引用

页码：775 / 778

页数：4

共 2 条

[1] Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application
Shin, Joong-Won
Tanuma, Masakazu
Ohmi, Shun-ichiro
IEICE TRANSACTIONS ON ELECTRONICS, 2023, E106C (10) : 581 - 587
[2] Effect of Kr/O2-Plasma Reactive Sputtering on Ferroelectric Nondoped HfO2 Formation for MFSFET With Pt Gate Electrode
Ohmi, S.
Kim, M. G.
Kataoka, M.
Hayashi, M.
Mailig, R. M. D.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (05) : 2427 - 2433

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