High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma

被引：0

作者：

Joo, Young-Hee ^{[1
]}

Kim, Chang-Il ^{[1
]}

机构：

[1] School of Electrical and Electronics Engineering, Chung-Ang University, 84, Heukseok-ro, Dongjak-gu, Seoul,156-759, Korea, Republic of

来源：

Thin Solid Films | 2015年 / 583卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Bias voltage - Gallium compounds - II-VI semiconductors - Inductively coupled plasma - Chemical analysis - Optical emission spectroscopy - Thin films - Oxide films - Semiconducting indium compounds - Zinc oxide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF4/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700W, a DC-bias voltage of-150 V, and a process pressure of 2 Pa. Amaximumetch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasmawith CF4/Ar(=25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF4/Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. © 2015 Elsevier B.V. All rights reserved.

引用

页码：40 / 45