Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

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[1] Liu, Yang
[2] Gao, Bo
[3] Gong, Min
[4] Shi, Ruiying
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Gao, Bo (gaobo@scu.edu.cn) | 1600年 / American Institute of Physics Inc.卷 / 121期
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