Device performance improvement based on transient enhanced diffusion suppression in the deep sub-quarter micron scale

被引：0
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作者：
Kim, Hyun-Sik [1 ]
Ahn, Jong-Hyon [1 ]
Lee, Duk-Min [1 ]
Yoo, Kwang-Dong [1 ]
Lee, Soo-Cheol [1 ]
Suh, Kwang-Pyuk [1 ]
机构：
[1] CPU Technology Team, Samsung Electronics Co., Ltd., San-24, Kiheung-eup, Yongin-city, Kyungki-do, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 5 B期
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页码：2172 / 2176
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