Low-temperature activation of boron ion in silicon substrate using B10H14+ cluster and by soft X-ray irradiation

被引：0

作者：

Heya, Akira ^{[1
]}

Matsuo, Naoto ^{[1
]}

Kanda, Kazuhiro ^{[2
]}

机构：

[1] Department of Materials and Synchrotron Radiation Engineering, University of Hyogo, Himeji, Hyogo,671-2280, Japan

[2] Department of Materials and Synchrotron Radiation Engineering, LASTI, University of Hyogo, Kamigori, Hyogo,678-1205, Japan

来源：

Japanese Journal of Applied Physics | 2018年 / 57卷 / 11期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Temperature - Boron - Semiconductor junctions - Silicon wafers - Synchrotron radiation - Irradiation

引用