Microstructure and electrical properties of (Ba,Sr)TiO3 thin films prepared by a sol-gel method

被引：0

作者：

Ren, Tian-Ling ^{[1
]}

Wang, Xiao-Ning ^{[1
]}

Liu, Jian-She ^{[1
]}

Zhao, Hong-Jin ^{[1
]}

Shao, Tian-Qi ^{[1
]}

Liu, Li-Tian ^{[1
]}

Li, Zhi-Jian ^{[1
]}

机构：

[1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China

来源：

Integrated Ferroelectrics | 2002年 / 45卷

关键词：

Atomic force microscopy - Electric properties - Microstructure - Permittivity - Rapid thermal annealing - Silicon - Sol-gels - Titanium compounds - X ray diffraction;

D O I：

10.1080/713718221

中图分类号：

学科分类号：

摘要：

Silicon-based BaxSr1-xTiO3 (BST) thin films have been prepared by a Sol-Gel method with rapid thermal annealing (RTA) processes. Phase structure of the films has been investigated by X-ray diffraction (XRD). Atomic force microscopy (AFM) studies reveal a smooth, dense and crack-free surface of the BST films. Microstructure and electrical properties of the BST films can be affected by the substrate and the annealing process. RTA method is found to be very efficient to improve the electrical properties of the films. Dielectric constant and dielectric loss of the BST films at 100 KHz are 230 and 0.02, respectively. Leakage current density of the BST capacitors is 1.6×10-7A/cm2 at 3V. © 2002 Taylor & Francis.

引用

页码：13 / 21