Enhanced light output of vertical-structured GaN-based light-emitting diodes with TiO2/SiO2 reflector and roughened GaO x surface film

被引：0

作者：

Lee, Wei-Chi ^{[1
]}

Wang, Shui-Jinn ^{[1
,2
]}

Uang, Kai-Ming ^{[3
]}

Chen, Tron-Min ^{[3
]}

Kuo, Der-Ming ^{[1
]}

Wang, Pei-Ren ^{[1
]}

Wang, Po-Hung ^{[1
]}

机构：

[1] Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

[2] Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan

[3] Department of Electrical Engineering, WuFeng University, Chia-yi Country 621, Taiwan

来源：

Japanese Journal of Applied Physics | 2011年 / 50卷 / 4 PART 2期

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摘要：

Gallium nitride - Irradiation - Reflection - Titanium dioxide - III-V semiconductors - DBR lasers - Distributed Bragg reflectors - Silicon compounds - Thin films

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