Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

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机构：
[1] Yacoub, H.
[2] Fahle, D.
[3] Eickelkamp, M.
[4] Wille, A.
[5] Mauder, C.
[6] Heuken, M.
[7] Kalisch, H.
[8] Vescan, A.
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| 1600年 / American Institute of Physics Inc.卷 / 119期
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Gallium nitride;
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