Recess-gate AlGaN/GaN HFET

被引：0
|
作者：
Zhang, Zhiguo [1 ,2 ,3 ]
Feng, Zhen [1 ,2 ]
Yang, Mengli [1 ,2 ]
Feng, Zhihong [1 ,2 ]
Mo, Jianghui [1 ,2 ]
Cai, Shujun [1 ,2 ]
Yang, Kewu [1 ,2 ]
机构：
[1] The 13th Research Institute, China Electronics Technology Group Corporation, Shijiazhuang 050051, China
[2] National Key Laboratory of ASIC, Shijiazhuang 050051, China
[3] School of Microelectronics, Xidian University, Xi'an 710071, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / 09期
关键词：
Aluminum gallium nitride - Electric potential - Heterojunctions;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A recessed gate AlGaN/GaN HFET with a total gate length of 100μm is studied. The device demonstrates an increase in transconductance from 260.3 to 314.8mS/mm compared to the unrecessed device, while the saturation current changes slightly. Moreover, the ideality is improved from 2.3 to 1.7. An output power density of 11.74W/mm is achieved at 8GHz and 40V using a load pull system.
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页码：1420 / 1423
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