Growth of Zno on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy

被引：0

作者：

Kawamoto, Noriaki ^{[1
,2
]}

Fujita, Miki ^{[1
,2
]}

Tatsumi, Tomohiko ^{[1
,2
]}

Horikoshi, Yoshiji ^{[1
,2
]}

机构：

[1] School of Science and Engineering, Waseda University, Shinjuku-ku, Tokyo 169-8555

[2] Kagami Mem. Lab. Mat. Sci./Technol., Waseda University, Shinjuku-ku, Tokyo 169-0051

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 12期

关键词：

AFM; Initial Zn layer; MBE; Oxygen plasma; PL; Si; XRD; ZnO;

D O I：

10.1143/jjap.42.7209

中图分类号：

学科分类号：

摘要：

Epitaxial ZnO films have been grown on Si(111) substrates by molecular beam epitaxy using oxygen plasma. An initial Zn layer deposition followed by its oxidation produces a superior template for the subsequent ZnO growth and a low-temperature ZnO buffer layer improves the structural and optical properties of ZnO films. As a result, we succeeded in growing high-quality ZnO films directly on Si substrates. We observed cracks composed of straight lines along the principal axes of the Si(111) surface. These cracks are probably caused by the difference in thermal expansion coefficient between ZnO and Si. X-ray diffraction measurements reveal that ZnO films do not include a rotational domain and the full width at half maximum of the diffraction peak of ZnO(0002) is 0.23 deg. The linewidth of the neutral-donor-bound exciton emission at 3.365 eV is as small as 6meV at 10K.

引用

页码：7209 / 7212

页数：3

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