Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN

被引：0

作者：

Kim, Je Won ^{[1
,2
]}

Kim, Seong-Il ^{[2
]}

Kim, Yong Tae ^{[2
]}

Kim, Sangsig ^{[1
]}

Sung, Man Young ^{[1
]}

Choi, In-Hoon ^{[3
]}

机构：

[1] School of Electrical Engineering, Korea University, Seoul 136-701, Korea, Republic of

[2] Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 136-791, Korea, Republic of

[3] Department of Materials Science, Korea University, Seoul 136-701, Korea, Republic of

来源：

| 1600年 / Japan Society of Applied Physics卷 / 40期

关键词：

Cobalt - Epitaxial growth - Heating furnaces - Rapid thermal annealing;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effects of rapid thermal annealing (RTA) on Co/p-GaN contacts in an O2/N2 atmosphere without intermediate metal were investigated. It was observed that the contact resistance (ρc) decreased with increasing RTA temperature and that the resistance was reduced by a factor of about 30 after RTA at 600°C in the O2/N2 atmosphere. The specific minimum contact resistance was in the 10-2 Ωcm2 range. Comparison of the R0 and ρc values revealed that the rapid thermal annealing in the O2/N2 was more effective for reducing the contact resistance than conventional furnace annealing. The reason for the reduction of resistance was expected to be the increase of hole concentration due to the highly reactivated removal of hydrogen atoms in the p-GaN by RTA in the O2/N2 atmosphere.

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