A compact model for dual material gate stack (DUMGAS) fully depleted SOI MOSFET

被引：0

作者：

Zheng, Changyong ^{[1
,2
]}

Xu, Tailong ^{[1
]}

Dai, Yuehua ^{[1
]}

Chen, Junning ^{[1
]}

机构：

[1] School of Electronics and Information Engineering, Anhui University

[2] Key Laboratory of Intelligent Building of Anhui Province, Anhui University of Architecture

来源：

Journal of Information and Computational Science | 2013年 / 10卷 / 13期

关键词：

Analytical model; DIBL; Dual material gate stack (DUMGAS) MOSFET; Simulation; Surface potential;

D O I：

10.12733/jics20102113

中图分类号：

学科分类号：

摘要：

An analytical surface potential model for the Dual Material Gate Stack (DUMGAS) fully depleted SOI MOSFET is developed based on the exact resultant solution of two dimensional Poisson equation. The model includes the effects of drain biases, gate workfunction, different combination length of Gate1 and Gate2, gate oxide thickness, source/drain doping concentration, substrate doping concentration and buried oxide thickness. More attention has been paid on seeking to explain the attributes of the DUMGAS fully depleted SOI MOSFET such as suppressing Drain-induced Barrier Lowering (DIBL), accelerating carrier drift velocity and device speed. The model is verified by comparison to the simulated results using the device simulator MEDICI. The accuracy of the results obtained using our analytical model is verified using 2-D numerical simulations. The model not only offers the physical insight into device physics but also provides the basic designing guideline for the device. © 2013 Binary Information Press.

引用

页码：4233 / 4245

页数：12

共 28 条

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