Asymmetric XMoSiN2 (X=S, Se, Te) monolayers as novel promising 2D materials for nanoelectronics and photovoltaics

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作者：

Sibatov, R.T. ^{[1
,2
,3
]}

Meftakhutdinov, R.M. ^{[3
]}

Kochaev, A.I. ^{[3
]}

机构：

[1] Department of Theoretical Physics, Moscow Institute of Physics and Technology (MIPT), Russia

[2] Research Laboratory for Advanced Processes, Scientific-Manufacturing Complex Technological Centre, Moscow, Russia

[3] Laboratory of Diffusion Processes, Ulyanovsk State University, Ulyanovsk, Russia

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This work was supported by the Ministry of Science and Higher Education of the Russian Federation (project # 075-15-2021-581 );

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