Low-temperature preparation of lead-based ferroelectric thick films by screen-printing

被引：0

作者：

Futakuchi, Tomoaki ^{[1
]}

Nakano, Kunitaka ^{[2
]}

Adachi, Masatoshi ^{[2
]}

机构：

[1] Toyama Industrial Technology Center, Toyama 930-0866

[2] Dept. of Electronics and Informatics, Faculty of Engineering, Toyama Prefectural University, Toyama 939-0398, Kosugi-machi

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 9 B期

关键词：

Ferroelectric thick film - Lead oxide - Remanent polarization;

D O I：

10.1143/jjap.39.5548

中图分类号：

学科分类号：

摘要：

Low-temperature preparation of ferroelectric Pb[Zr0.2Ti0.3(Mg1/3Nb2/3)0.3 (Zn1/3Nb2/3)0.1(Mg 1/2 W 1/2 )0.1]O3 thick films by a screen-printing method on ZrO2 ceramic substrates and Si substrates was examined. The influence of excess PbO as a sintering aid was investigated in comparison with bulk ceramics. The remanent polarization and coercive field of the thick film fired at 850°C on Si substrate were 8.1 μC/cm2 and 5.7 kV/cm, respectively. The low-temperature process using this ferroelectric thick film is very promising for the development of advanced microactuators.

引用

页码：5548 / 5551

页数：3