Investigation of focused ion beam induced damage in single crystal diamond tools

被引：0

作者：

Tong, Zhen ^{[1
,2
]}

Luo, Xichun ^{[1
]}

机构：

[1] Centre for Precision Manufacturing, Department of Design, Manufacture and Engineering Management, University of Strathclyde, Glasgow,G1 1XQ, United Kingdom

[2] Center for Precision Engineering, Harbin Institute of Technology, Harbin,150001, China

来源：

Applied Surface Science | 2015年 / 347卷

基金：

英国工程与自然科学研究理事会;

关键词：

Cutting tools - Ions - Single crystals - Gallium compounds - Transmission electron microscopy - Diamonds - Ion bombardment - Crystal cutting - Focused ion beams;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this work, transmission electron microscope (TEM) measurements and molecular dynamics (MD) simulations were carried out to characterise the focused ion beam (FIB) induced damage layer in a single crystal diamond tool under different FIB processing voltages. The results obtained from the experiments and the simulations are in good agreement. The results indicate that during FIB processing cutting tools made of natural single crystal diamond, the energetic Ga+ collision will create an impulse-dependent damage layer at the irradiated surface. For the tested beam voltages in a typical FIB system (from 8kV to 30kV), the thicknesses of the damaged layers formed on a diamond tool surface increased from 11.5nm to 27.6nm. The dynamic damage process of FIB irradiation and ion-solid interactions physics leading to processing defects in FIB milling were emulated by MD simulations. The research findings from this study provide the in-depth understanding of the wear of nanoscale multi-tip diamond tools considering the FIB irradiation induced doping and defects during the tool fabrication process. © 2015 Elsevier B.V. All rights reserved.

引用

页码：727 / 735