Optical characterization of gate oxide charging damage by photoreflectance spectroscopy

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作者：
Agata, Masashi [3 ]
Wada, Hideo [3 ]
Maida, Osamu [3 ]
Eriguchi, Koji [1 ]
Fujimoto, Akira [2 ]
Kanashima, Takeshi [3 ]
Okuyama, Masanori [3 ]
机构：
[1] ULSI Process Tech. Dev. Ctr., Matsushita Electronics, 19 Nishikujo-Kasugacho, Minami-ku, Kyoto 601-8413, Japan
[2] Dept. Electrical Engineering, Wakayama Natl. College of Technology, 77 Noshima, Nadacho, Goboshi 644-0023, Japan
[3] Department of Physical Science, Grad. School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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| 1600年 / JJAP, Tokyo, Japan卷 / 39期
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