Effect of Surface Roughness on Range Straggling at Low Energy Ions Bombardment

被引:0
|
作者
Djallel, Mahdi [1 ]
机构
[1] Univ Mohamed Boudiaf Msila, Dept Hydraul, Fac Technol, Msila, Algeria
来源
JOURNAL OF SURFACE INVESTIGATION | 2024年 / 18卷 / 04期
关键词
range straggling; ion dose irradiation; unchanged surface density rate; surface roughness; collisional mixing; DEPTH RESOLUTION; PROFILES;
D O I
10.1134/S1027451024700757
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The primary ions strike the target in randomly distributed points of its surface, potentially leading to the creation of surface roughness. The first involves exploring the variation in density near surface target which is challenging to measure. The second focuses on observing alterations in the surface topography of the target by measuring the amount of deformation in the geometric structure. This brief work is clearly needed to clarify the first approach by adopting the feasible expressions to establish the dependence of the range straggling, energy and dose of ions beam on the basic mechanisms leading to surface roughness by introducing new parameter described the unchanged surface density rate. This parameter predicts the frequency of presence roughness phenomena. The results of our simulations performed for an amorphous target are in perfect agreement with experimental results obtained by Wach et al.
引用
收藏
页码:1007 / 1014
页数:8
相关论文
共 50 条
  • [1] Sputtering yields, range and range straggling in Al following Kr+ ions bombardment in the energy range (20-160) keV
    Mammeri, S
    Ouichaoui, S
    Zemih, R
    Ammi, H
    Abdesselam, M
    Chami, AC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 240 (1-2) : 162 - 167
  • [2] The energy straggling of ions implanted into a crystalline target and its effect on the lateral distribution
    Nakagawa, ST
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 153 (1-4) : 446 - 451
  • [3] The mean projected range and range straggling of Yb ions implanted in silicon crystal
    Qin, Xi-Feng
    Wang, Hui-Ning
    Ji, Zi-Wu
    Wang, Feng-Xiang
    Fu, Gang
    NEW MATERIALS AND PROCESSES, PTS 1-3, 2012, 476-478 : 1249 - +
  • [4] The mean projected range and range straggling of Nd ions implanted in silicon carbide
    Qin, Xifeng
    Li, Shuang
    Wang, Fengxiang
    Liang, Yi
    ADVANCED MATERIALS AND COMPUTER SCIENCE, PTS 1-3, 2011, 474-476 : 565 - 569
  • [5] The Mean Projected Range and Range Straggling of Er Ions Implanted in Silicon-on-insulator
    Qin, Xifeng
    Li, Shuang
    Wang, Fengxiang
    Liang, Yi
    ADVANCES IN KEY ENGINEERING MATERIALS, 2011, 214 : 522 - +
  • [6] Range straggling of low energy 8Li+ in thin metallic films using β-NMR
    Beals, TR
    Kiefl, RF
    MacFarlane, WA
    Nichol, KM
    Morris, GD
    Levy, CDP
    Kreitzman, SR
    Poutissou, R
    Daviel, S
    Baartman, RA
    Chow, KH
    PHYSICA B-CONDENSED MATTER, 2003, 326 (1-4) : 205 - 208
  • [7] Projected range, range straggling and lateral spread of 2.0 MeV An+ ions implanted into Si
    Wang, KM
    Chen, F
    Hu, H
    Zhang, JH
    Liu, XD
    Shen, DY
    Narusawa, T
    Nagaki, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2A): : 918 - 921
  • [8] The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide
    Qin, Xi-Feng
    Wang, Hui-Ning
    Ji, Zi-Wu
    Wang, Feng-Xiang
    Fu, Gang
    ADVANCED MATERIALS RESEARCH II, PTS 1 AND 2, 2012, 463-464 : 798 - +
  • [9] Effect of sample rotation on surface roughness with keV C60 bombardment in secondary ion mass spectrometry (SIMS) experiments
    Garrison, Barbara J.
    Postawa, Zbigniew
    CHEMICAL PHYSICS LETTERS, 2011, 506 (4-6) : 129 - 134
  • [10] Surface roughening of silicon under ultra-low-energy cesium bombardment
    Kataoka, Y
    Yamazaki, K
    Shigeno, M
    Tada, Y
    Wittmaack, K
    APPLIED SURFACE SCIENCE, 2003, 203 : 43 - 47