Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry

被引：0

作者：

Jellison Jr., G.E. ^{[1
]}

Merkulov, V.I. ^{[1
]}

Puretzky, A.A. ^{[1
]}

Geohegan, D.B. ^{[1
]}

Eres, G. ^{[1
]}

Lowndes, D.H. ^{[1
]}

Caughman, J.B. ^{[2
]}

机构：

[1] Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056, United States

[2] Fusion Energy Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056, United States

来源：

Thin Solid Films | 2000年 / 377-378卷

关键词：

This research was sponsored by the US Department of Energy under contract No. DE-AC05-00OR22725 with the Oak Ridge National Laboratory; managed by UT-Battelle; LLC;

D O I：

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学科分类号：

摘要：

引用

页码：68 / 73