High-temperature stability of SiO2 oxide film on surface of SiC

被引:0
作者
Yamaguchi S. [1 ]
Yusufu A. [1 ]
Shirahama T. [1 ]
Murakami Y. [1 ]
Onitsuka T. [1 ]
Uno M. [1 ]
机构
[1] University of Fukui, 1-2-4 Kanawa-cho, Tsuruga-shi, Fukui
关键词
Accident tolerant fuel; Cracking; High temperature; Microstructure; Oxidation; Oxide film; Porous structure; Silicon carbide; Thermodynamics;
D O I
10.3327/taesj.J18.044
中图分类号
学科分类号
摘要
SiC, which is a promising accident-tolerant fuel cladding, is a non-oxide, and it is known that passive oxidation occurs, where by a protective oxide film of SiO2 is formed under atmospheric conditions above 900°C. The reaction occurring at this high temperature is important in assessing the soundness of SiC during a severe accident, but the understanding of it is still insufficient. In this study, to evaluate the high-temperature oxidation behavior when SiC cladding is exposed to the atmosphere( 105 Pa) during an accident involving a light-water reactor, an oxidation test was performed for up to 100 h at 1100 to 1500°C. As a result, a SiO2 oxide film was formed on the surface of SiC, but the formation of bubbles originating from impurities and cracks due to a phase transformation was confirmed. In addition, it was observed, for the first time in this research, that a multilayered SiO2 oxide film was formed at 1500°C. Therefore, it was shown that the oxidation reaction of SiC does not stop depending on the surrounding conditions under high temperature and atmospheric conditions. © 2019 Atomic Energy Society of Japan, All Rights Reserved.
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页码:219 / 225
页数:6
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