High-temperature stability of SiO2 oxide film on surface of SiC

被引：0

作者：

Yamaguchi S. ^{[1
]}

Yusufu A. ^{[1
]}

Shirahama T. ^{[1
]}

Murakami Y. ^{[1
]}

Onitsuka T. ^{[1
]}

Uno M. ^{[1
]}

机构：

[1] University of Fukui, 1-2-4 Kanawa-cho, Tsuruga-shi, Fukui

来源：

Transactions of the Atomic Energy Society of Japan | 2019年 / 18卷 / 04期

关键词：

Accident tolerant fuel; Cracking; High temperature; Microstructure; Oxidation; Oxide film; Porous structure; Silicon carbide; Thermodynamics;

D O I：

10.3327/taesj.J18.044

中图分类号：

学科分类号：

摘要：

SiC, which is a promising accident-tolerant fuel cladding, is a non-oxide, and it is known that passive oxidation occurs, where by a protective oxide film of SiO2 is formed under atmospheric conditions above 900°C. The reaction occurring at this high temperature is important in assessing the soundness of SiC during a severe accident, but the understanding of it is still insufficient. In this study, to evaluate the high-temperature oxidation behavior when SiC cladding is exposed to the atmosphere( 105 Pa) during an accident involving a light-water reactor, an oxidation test was performed for up to 100 h at 1100 to 1500°C. As a result, a SiO2 oxide film was formed on the surface of SiC, but the formation of bubbles originating from impurities and cracks due to a phase transformation was confirmed. In addition, it was observed, for the first time in this research, that a multilayered SiO2 oxide film was formed at 1500°C. Therefore, it was shown that the oxidation reaction of SiC does not stop depending on the surrounding conditions under high temperature and atmospheric conditions. © 2019 Atomic Energy Society of Japan, All Rights Reserved.

引用

页码：219 / 225

页数：6

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