Atomic vapor deposition of bismuth titanate thin films

被引：0
|
作者：
Deepak, Nitin [1 ]
Zhang, Panfeng F. [1 ]
Keeney, Lynette [1 ]
Pemble, Martyn E. [1 ]
Whatmore, Roger W. [1 ]
机构：
[1] Tyndall National Institute, University College Cork, Lee Maltings', Dyke Parade, Cork, Ireland
来源：
Journal of Applied Physics | 2013年 / 113卷 / 18期
关键词：
Number:; 2007-2011; Acronym:; -; Sponsor:; 07/SRC/I1172; SFI; Sponsor: Science Foundation Ireland;
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摘要：
c-axis oriented ferroelectric bismuth titanate (Bi4Ti 3O12) thin films were grown on (001) strontium titanate (SrTiO3) substrates by an atomic vapor deposition technique. The ferroelectric properties of the thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data and transmission electron microscopy analysis demonstrated the presence of out-of-phase boundaries (OPBs). It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films. Piezo-responses of the thin films were measured by piezo-force microscopy. It is found that the in-plane piezoresponse is stronger than the out-of-plane response, due to the strong c-axis orientation of the films. © 2013 AIP Publishing LLC.
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