Low temperature recovery of Ru/(Ba,Sr)TiO3/Ru capacitors degraded by forming gas annealing

被引：0
|
作者：
Iizuka, Toshihiro [1 ]
Arita, Koji [1 ]
Yamamoto, Ichiro [1 ]
Yamamichi, Shintaro [2 ]
Yamaguchi, Hiromu [1 ]
Matsuki, Takeo [1 ]
Sone, Shuji [1 ]
Yabuta, Hisato [2 ]
Miyasaka, Yoichi [2 ]
Kato, Yoshitake [1 ,3 ]
机构：
[1] ULSI Device Development Laboratory, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
[2] Funct. Mat. Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Kawasaki, Kanagawa 216-8555, Japan
[3] Adv. Process R and D and Strategy, Research Planning Office, Semiconduct. Leading Edge T., 292 Yoshida-cho, Yokohama, Kanagawa 244-0817, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 5 B期
关键词：
Forming gas annealing - Post annealing - Thin film capacitor;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：2063 / 2067
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