Influence of deposition temperature on growth orientation of PZT/LSAT thin film

被引：0
作者：
Zhu, Jie [1 ,2 ]
Xie, Kang [1 ]
Zhang, Hui [2 ]
Hu, Juntao [2 ]
Zhang, Pengxiang [2 ]
机构：
[1] Key Laboratory of Broadband Optical Fiber Transmission of Communication Networks, University of Electronic Science and Technology of China
[2] Institute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2008年 / 35卷 / 09期
关键词：
Atomic force microscopy; Ferroelectric thin flims; Pulse laser deposition; Thin film orientation; Thin films; X-ray diffraction;
D O I：
10.3788/CJL20083509.1384
中图分类号：
学科分类号：
摘要：
Pb(Zr0.3Ti0.7)O3 (PZT) ferroelectric thin films are grown by pulsed laser deposition (PLD) on LaSrAlTaO3(LSAT) single crystal substrates from sintered targets of Pb(Zr0.3Ti0.7)O3 and Pb1.1(Zr0.3Ti0.7)O3 (excessive 10%-Pb) with variable temperature of 550-750°C, respectively. The pattern observed by X-ray diffraction (XRD) indicates that the orientation of thin film growth transits from approximate c-axis at 550°C to approximate a-axis at 750°C gradually in the no-excessive situation. But in the lead excessive situation, the thin film growth has no obvious transition change. Surface morphology measured by atomic force microscopy (AFM) demonstrates that the root-mean-square (RMS) roughnesses are 16.9 nm and 13.7 nm respectively when the PZT films are grown of approximate c-axis and a-axis. But in the mixed growth orientation, the RMS roughness was about 68 nm due to the competition growth.
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页码：1384 / 1387
页数：3
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