Tunnel junction AlGaInP light emitting diode

被引：0
|
作者：
Wang, Guohong [1 ]
Shen, Guangdi [1 ]
Guo, Xia [1 ]
Gao, Guo [1 ]
Wei, Xin [1 ]
Zhang, Guangze [1 ]
Ma, Xiaoyu [1 ]
Li, Yuzhang [1 ]
Chen, Lianghui [1 ]
机构：
[1] Inst. of Info., Beijing Polytech. Univ., Beijing 100022, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2002年 / 23卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
9
引用
收藏
页码：628 / 631
相关论文
共 50 条
  • [41] Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
    Diagne, M
    He, Y
    Zhou, H
    Makarona, E
    Nurmikko, AV
    Han, J
    Waldrip, KE
    Figiel, JJ
    Takeuchi, T
    Krames, M
    APPLIED PHYSICS LETTERS, 2001, 79 (22) : 3720 - 3722
  • [42] Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode
    Schineller, B.
    Junas, Y.
    Heuken, M.
    Heime, K.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1998, B51 (1-3): : 34 - 38
  • [43] Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode
    Schineller, B
    Junas, Y
    Heuken, M
    Heime, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 51 (1-3): : 34 - 38
  • [44] On an AlGaInP-Based Light-Emitting Diode With an ITO Direct Ohmic Contact Structure
    Yen, Chih-Hung
    Liu, Yi-Jung
    Yu, Kuo-Hui
    Lin, Pei-Ling
    Chen, Tzu-Pin
    Chen, Li-Yang
    Tsai, Tsung-Han
    Huang, Nan-Yi
    Lee, Chong-Yi
    Liu, Wen-Chau
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (04) : 359 - 361
  • [45] Improvement of AlInP-AlGaInP MQW light-emitting diode by meshed contact layer
    Wang, HC
    Su, YK
    Lin, CL
    Chen, WB
    Chen, SM
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (11) : 1491 - 1493
  • [46] Wide-spectrum and high-homogeneity InGaN tunnel-junction light-emitting diode stacked by two unit light-emitting diodes
    Huang, Man-Fang
    Huang, Yen-Lung
    Chang, Jih-Yuan
    Shih, Ya-Hsuan
    Kuo, Yen-Kuang
    MICRO AND NANOSTRUCTURES, 2022, 167
  • [47] Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions
    Piprek, Joachim
    APPLIED PHYSICS LETTERS, 2014, 104 (05)
  • [48] Room temperature spin injection in a light-emitting diode based on a GaMnSb/n-GaAs/InGaAs tunnel junction
    Dorokhin, M. V.
    Ved', M. V.
    Malysheva, E. I.
    Demina, P. B.
    Zdoroveyshchev, A. V.
    Kudrin, A. V.
    Danilov, Yu A.
    18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2017, 816
  • [49] An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band
    Sadaf, S. M.
    Zhao, S.
    Wu, Y.
    Ra, Y. -H.
    Liu, X.
    Vanka, S.
    Mi, Z.
    NANO LETTERS, 2017, 17 (02) : 1212 - 1218
  • [50] Effect of Surface Texture and Backside Patterned Reflector on the AlGaInP Light-Emitting Diode: High Extraction of Waveguided Light
    Lee, Ya-Ju
    Lee, Chia-Jung
    Chen, Chih-Hao
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (05) : 636 - 641
12345