Surface images of SiO2/Si(100) pattern using electron emission microscopy with metastable atoms, photons and low-energy electrons

被引：0

作者：

Yasufuku, H. ^{[1
]}

Okumura, M. ^{[1
]}

Ibe, T. ^{[1
,2
]}

Okudaira, K.K. ^{[1
]}

Harada, Y. ^{[2
]}

Ueno, N. ^{[1
]}

机构：

[1] Chiba Univ., Chiba, Japan

[2] Seitoku Univ., Matsudo, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 4 A期

关键词：

Electron emission - Electron energy levels - Electron microscopy - Image analysis;

D O I：

10.1143/jjap.40.2447

中图分类号：

学科分类号：

摘要：

The surface images of a SiO2 pattern on Si(100) was observed by three types of electron emission microscopies, i.e., metastable electron emission microscopy (MEEM) with metastable He, photoelectron emission microscopy (PEEM) and low-energy electron emission microscopy (LEEM). Among these, MEEM gave the most diffused image at the pattern edges of the SiO2 region. Furthermore, it is found that the difference in MEEM, LEEM and PEEM images can provide new information on the spatial distribution of surface electronic states. By comparing MEEM, LEEM and PEEM images, it is expected that we can obtain local information on surface electronic states in more detail.

引用

页码：2447 / 2450