Characteristics of epitaxial and implanted n-base 4H-SiC GTO thyristors

被引：0
|
作者：
Fedison, J.B. [1 ]
Chow, T.P. [1 ]
机构：
[1] Ctr. Intgd. Electronics E., Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, United States
来源：
Materials Science Forum | 2001年 / 353-356卷
关键词：
D O I：
10.4028/www.scientific.net/msf.353-356.739
中图分类号：
学科分类号：
摘要：
Silicon carbide
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页码：739 / 742
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