Characteristics of epitaxial and implanted n-base 4H-SiC GTO thyristors

被引：0
|
作者：
Fedison, J.B. [1 ]
Chow, T.P. [1 ]
机构：
[1] Ctr. Intgd. Electronics E., Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, United States
来源：
Materials Science Forum | 2001年 / 353-356卷
关键词：
D O I：
10.4028/www.scientific.net/msf.353-356.739
中图分类号：
学科分类号：
摘要：
Silicon carbide
引用
收藏
页码：739 / 742
相关论文
共 50 条
  • [21] Turn-on process in 4H-SiC thyristors
    Levinshtein, ME
    Palmour, JW
    Rumyanetsev, SL
    Singh, R
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (07) : 1177 - 1179
  • [22] Nitrogen incorporation characteristics of 4H-SiC epitaxial layer
    Jia, Renxu
    Zhang, Yimen
    Zhang, Yuming
    Wang, Yuehu
    THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE, 2008, 6984
  • [23] Optimization of Holding Current in 4H-SiC Thyristors
    Soloviev, Stanislav
    Elasser, Ahmed
    Katz, Sarah
    Arthur, Steve
    Stum, Zach
    Yu, Liangchun
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 994 - 997
  • [24] Turn-on process in 4H-SiC thyristors
    Levinshtein, ME
    Palmour, JW
    Rumyantsev, SL
    Singh, R
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 601 - 603
  • [25] Nitrogen incorporation characteristics on a 4H-SiC epitaxial layer
    Kojima, K
    Kuroda, S
    Okumura, H
    Arai, K
    APPLIED PHYSICS LETTERS, 2006, 88 (02) : 1 - 3
  • [26] Ohmic contacts to p-type epitaxial and implanted 4H-SiC
    Crofton, J.
    Williams, J. R.
    Adedeji, A. V.
    Scofield, J. D.
    Dhar, S.
    Feldman, L. C.
    Bozack, M. J.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 895 - 898
  • [27] Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
    Calabretta, Cristiano
    Agati, Marta
    Zimbone, Massimo
    Boninelli, Simona
    Castiello, Andrea
    Pecora, Alessandro
    Fortunato, Guglielmo
    Calcagno, Lucia
    Torrisi, Lorenzo
    La Via, Francesco
    MATERIALS, 2019, 12 (20)
  • [28] The critical charge density of 4H-SiC thyristors
    Levinshtein, ME
    Palmour, JW
    Rumyanetsev, SL
    Singh, R
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (01) : 307 - 312
  • [29] Gettering effect with Al implanted into 4H-SiC CVD epitaxial layers
    Kalinina, E
    Kholujanov, G
    Sitnikova, A
    Kossov, V
    Yafaev, R
    Pensl, G
    Reshanov, S
    Hallén, A
    Konstantinov, A
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 637 - 640
  • [30] Effective channel mobility in epitaxial and implanted 4H-SiC lateral MOSFETs
    Haney, Sarah Kay
    Ryu, Sei-Hyung
    Dhar, Sarit
    Agarwal, Anant
    Johnson, Mark
    SILICON CARBIDE 2008 - MATERIALS, PROCESSING AND DEVICES, 2008, 1069 : 257 - +
12345