Fabrication and Characteristics of MoS2 Nanosheets on Photo-sensing and Gas-sensing

被引:0
|
作者
Ma H. [1 ]
Yang R. [1 ]
Li C. [1 ]
Han Y. [1 ]
机构
[1] School of Electronics and Information Engineering, Hebei University of Technology, Tianjin
来源
Cailiao Daobao/Materials Review | 2018年 / 32卷 / 03期
关键词
Gas sensitive; Molybdenum disulfide; Nanosheets; Photo sensitive;
D O I
10.11896/j.issn.1005-023X.2018.06.002
中图分类号
学科分类号
摘要
High-purity MoS2 nanosheets have been synthesized by thermal sulfuration method. The phase and morphology of the samples were characterized by X-ray diffraction, Raman spectrometer, scanning electron microscope and energy dispersive spectrometer. The effect of reaction temperature on the MoS2 nanosheets was analyzed. The photo sensitive and gas sensitive properties of MoS2 were studied. It was found that the nanosheets was more sensitive to the green light than the red light. High sensor response and fast response/recovery time to methanol, ethanol were observed in MoS2 nanosheets based device, and its gas sensing mechanism was discussed. © 2018, Materials Review Magazine. All right reserved.
引用
收藏
页码:860 / 864
页数:4
相关论文
共 27 条
  • [1] Miro P., Audiffred M., Heine T., An atlas of two-dimensional materials, Chemical Society Reviews, 43, 18, (2014)
  • [2] Mak K.F., Lee C., Hone J., Et al., Atomically thin MoS<sub>2</sub>: A new direct-gap semiconductor, Physical Review Letters, 105, 13, (2010)
  • [3] Kuc A., Zibouche N., Heine T., Influence of quantum confinement on the electronic structure of the transition metal sulfide TS<sub>2</sub> , Physical Review B, 83, 24, (2011)
  • [4] Radisavljevic B., Whitwick M.B., Kis A., Small-signal amplifier based on single-layer MoS<sub>2</sub> , Applied Physics Letters, 101, 4, (2012)
  • [5] Wu D., Zhang Z., Lv D., Et al., High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS<sub>2</sub> , Materials Express, 6, 2, (2016)
  • [6] Saito Y., Nakamura Y., Bahramy M.S., Et al., Superconductivity protected by spin-valley locking in ion-gated MoS<sub>2</sub> , Nature Physics, 12, 2, (2016)
  • [7] Pospischil A., Mueller T., Optoelectronic devices based on atomically thin transition metal dichalcogenides, Applied Sciences, 6, 3, (2016)
  • [8] Ye Y., Ye Z., Gharghi M., Et al., Exciton-dominant electroluminescence from a diode of monolayer MoS<sub>2</sub> , Applied Physics Letters, 104, 19, (2014)
  • [9] Withers F., Del Pozo-Zamudio O., Mishchenko A., Et al., Light-emitting diodes by band-structure engineering in van der Waals heterostructures, Nature Materials, 14, 3, (2015)
  • [10] Bernardi M., Palummo M., Grossman J.C., Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials, Nano Letters, 13, 8, (2013)