Growth of Ga2O3 Thin Films on Si Substrates by Mist CVD Technique

被引：0

作者：

Kikuchi, Eiji ^{[1
]}

Kaneko, Kentaro ^{[1
]}

Fujita, Shizuo ^{[1
]}

机构：

[1] Photonics and Electronics Science and Engineering Center, Kyoto Univ., Nishikyo-ku, Kyoto,615-8520, Japan

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关键词：

Amorphous silicon - Buffer layers - Chemical vapor deposition - Crystallinity - Gallium compounds - II-VI semiconductors - Oxide films - Thin films;

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页码：835 / 840