Growth of Ga2O3 Thin Films on Si Substrates by Mist CVD Technique

被引：0
|
作者：
Kikuchi, Eiji [1 ]
Kaneko, Kentaro [1 ]
Fujita, Shizuo [1 ]
机构：
[1] Photonics and Electronics Science and Engineering Center, Kyoto Univ., Nishikyo-ku, Kyoto,615-8520, Japan
来源：
Zairyo/Journal of the Society of Materials Science, Japan | 2022年 / 71卷 / 10期
关键词：
Amorphous silicon - Buffer layers - Chemical vapor deposition - Crystallinity - Gallium compounds - II-VI semiconductors - Oxide films - Thin films;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：835 / 840
相关论文
共 50 条
  • [1] Prospects of mist CVD for fabrication of β-Ga2O3 MESFETs on β-Ga2O3 (010) substrates
    Takane, Hitoshi
    Ando, Yuji
    Takahashi, Hidemasa
    Makisako, Ryutaro
    Ikeda, Hikaru
    Ueda, Tetsuzo
    Suda, Jun
    Tanaka, Katsuhisa
    Fujita, Shizuo
    Sugaya, Hidetaka
    APPLIED PHYSICS EXPRESS, 2023, 16 (08)
  • [2] Coherent growth of β-(Al x Ga1-x )2O3 alloy thin films on (010) β-Ga2O3 substrates using mist CVD
    Kaneko, Masahiro
    Nishinaka, Hiroyuki
    Kanegae, Kazutaka
    Yoshimoto, Masahiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SF)
  • [3] Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates
    See, Ji-Yeon
    Kim, Tae-Gyu
    Shin, Yun-Ji
    Jeong, Seong-Min
    Bae, Si-Young
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2021, 31 (06): : 233 - 239
  • [4] Growth and characterization of β-Ga2O3 thin films on different substrates
    Hao, S. J.
    Hetzl, M.
    Schuster, F.
    Danielewicz, K.
    Bergmaier, A.
    Dollinger, G.
    Sai, Q. L.
    Xia, C. T.
    Hoffmann, T.
    Wiesinger, M.
    Matich, S.
    Aigner, W.
    Stutzmann, M.
    JOURNAL OF APPLIED PHYSICS, 2019, 125 (10)
  • [5] Chemical vapor deposition of Ga2O3 thin films on Si substrates
    Kim, DH
    Yoo, SH
    Chung, TM
    An, KS
    Yoo, HS
    Kim, Y
    BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 2002, 23 (02) : 225 - 228
  • [6] Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate
    王公堂
    薛成山
    杨兆柱
    Chinese Physics B, 2008, 17 (04) : 1326 - 1330
  • [7] Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate
    College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
    Chin. Phys., 2008, 4 (1326-1330):
  • [8] Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate
    Wang Gong-Tang
    Xue Cheng-Shan
    Yang Zhao-Zhu
    CHINESE PHYSICS B, 2008, 17 (04) : 1326 - 1330
  • [9] Challenges and solutions in Mist-CVD of Ga2O3 heteroepitaxial films
    Vasin, A. V.
    Yatskiv, R.
    Cernohorsky, O.
    Basinova, N.
    Grym, J.
    Korchovyi, A.
    Nazarov, A. N.
    Maixner, J.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 186
  • [10] Low temperature growth of Ga2O3 thin films on Si substrates by MOCVD and their electrical characteristics
    Lee, Jung Bok
    Ahn, Nam Jun
    Ahn, Hyung Soo
    Kim, Kyung Hwa
    Yang, Min
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2022, 32 (02): : 45 - 50
12345