Preparation of semi-insulating material by annealing undoped InP

被引:0
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作者
Zhao, Youwen [1 ]
Dong, Hongwei [1 ]
Jiao, Jinghua [1 ]
Zhao, Jianqun [1 ]
Lin, Lanying [1 ]
Sun, Niefeng [1 ]
Sun, Tongnian [1 ]
机构
[1] Mat. Sci. Cent., Inst. of Semi-conduct., Chinese Acad. of Sci., Beijing 100083, China
关键词
Deep defect - Iron phosphide - Pure phosphorus - Semi insulating indium phosphide;
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页码:285 / 289
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