Preparation and Performance Optimization of Inkjet-printed Vertical Organic Phototransistor

被引：0

作者：

Zhang G.-C. ^{[1
,2
]}

Zhang P.-J. ^{[3
]}

He X.-L. ^{[1
]}

Zhang H. ^{[2
]}

机构：

[1] Research Center for Microelectronics Technology, Fujian University of Technology, Fuzhou

[2] Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou

[3] College of Information Science and Engineering, Fujian University of Technology, Fuzhou

来源：

Guangzi Xuebao/Acta Photonica Sinica | 2019年 / 48卷 / 12期

关键词：

Electron capture; Inkjet printing; Phototransistors; Ultra-short channel; Vertical transistors;

D O I：

10.3788/gzxb20194812.1223001

中图分类号：

TN3 [半导体技术]; TN4 [微电子学、集成电路（IC）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 1401 ;

摘要：

The source electrode and drain electrode are prepared with inkjet printed active layer on the spin-coated transparent source electrode, obtaining a vertical phototransistor with high photoresponsivity of ~1 500 A/W and high detectivity of ~1.6×1014 Jones. By doping electron capture materials PCBM into the active layer, the recombination of photo-generated holes in the active layer decreases and the photo-generated current increases. Thus the photodetector performance is improved further. It is found that when the electron capture material doping is 5wt%, the performance of phototransistor is better. The photoresponsivity is boosted to about 6 000 A/W and the detectivity is up to 1.4 × 1015 Jones. © 2019, Science Press. All right reserved.

引用

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