In situ observation of etching profile in inductively coupled plasma etching of GaAs and InP using long distance microscope

被引：0

作者：

Matsutani, Akihiro ^{[1
]}

Ohtsuki, Hideo ^{[2
]}

Koyama, Fumio ^{[1
]}

机构：

[1] Precision and Intelligence Lab., Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503

[2] Samco International Inc., 36 Waraya-Cho, Takeda, Fujimi-ku

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 2 A期

关键词：

Dry etching; GaAs; Inductively coupled plasma (ICP); InP; Long-distance microscope;

D O I：

10.1143/jjap.42.426

中图分类号：

学科分类号：

摘要：

We investigated the in situ observation of the etching profile in inductively coupled plasma etching of GaAs and InP, which enables real-time control of the etching profile and depth from outside the process chamber. The etching profile image of the line and space was obtained with a long-distance microscope. The image was almost the same as that obtained with a scanning electron microscope or a conventional optical microscope. We think that this proposed method is an important monitoring technique for real-time control in the dry etching process.

引用

页码：426 / 427

页数：1

共 50 条

[41] Inductively coupled plasma reactive ion etching of copper thin films using ethylenediamine/butanol/Ar plasma [J].

Cha, Moon Hwan ;

Lim, Eun Taek ;

Park, Sung Yong ;

Lee, Ji Su ;

Chung, Chee Won .

VACUUM, 2020, 181

[42] Device characteristics of AlGaAs/InGaAs HEMTs fabricated by inductively coupled plasma etching [J].

Lee, JH ;

Yoon, HS ;

Shim, JY ;

Kim, HC .

THIN SOLID FILMS, 2003, 435 (1-2) :139-144

[43] Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching [J].

Yu, CC ;

Chu, CF ;

Tsai, JY ;

Huang, HW ;

Hsueh, TH ;

Lin, CF ;

Wang, SC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (8B) :L910-L912

[44] Fabrication of Germanium Tin Microstructures Through Inductively Coupled Plasma Dry Etching [J].

Lin, Guangyang ;

Cui, Peng ;

Wang, Tao ;

Hickey, Ryan ;

Zhang, Jie ;

Zhao, Haochen ;

Kolodzey, James ;

Zeng, Yuping .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2021, 20 :846-851

[45] Anisotropic Pattern Transfer in Ultrananocrystalline Diamond Films by Inductively Coupled Plasma Etching [J].

Park, Jong Cheon ;

Kim, Seong Hak ;

Cha, Seung Uk ;

Jeong, Ok Geun ;

Kim, Tae Gyu ;

Kim, Jin Kon ;

Cho, Hyun .

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2014, 14 (12) :9078-9081

[46] Electromagnetic Design of Excitation Coils for an Inductively-Coupled Plasma Etching System [J].

Molles, Jack ;

Popovic, Zoya ;

Shukla, Prasoon ;

Peng, Shen .

2024 IEEE WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE, WAMICON, 2024,

[47] Uniformity studies of inductively coupled plasma etching in fabrication of HgCdTe detector arrays [J].

Bommena, R. ;

Velicu, S. ;

Boieriu, P. ;

Lee, T. S. ;

Grein, C. H. ;

Tedjojuwono, K. K. .

INFRARED TECHNOLOGY AND APPLICATIONS XXXIII, 2007, 6542

[48] Fabrication of two-dimensional InP photonic band-gap crystals by reactive ion etching with inductively coupled plasma [J].

Fujiwara, Y ;

Kikuchi, K ;

Hashimoto, M ;

Hatate, H ;

Imai, T ;

Takeda, Y ;

Nakano, H ;

Honda, M ;

Tatsuta, T ;

Tsuji, O .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (12B) :7763-7768

[49] Advanced inductively coupled plasma etching processes for fabrication of resonator-quantum well infrared photodetector [J].

Sun, J. ;

Choi, K. K. ;

Jhabvala, M. D. ;

Jhabvala, C. A. ;

Waczynski, A. ;

Olver, K. .

INFRARED PHYSICS & TECHNOLOGY, 2015, 70 :25-29

[50] Fabrication of indium phosphide compound photonic crystal by hydrogen iodide/xenon inductively coupled plasma etching [J].

Fujita, M ;

Sugitatsu, A ;

Uesugi, T ;

Noda, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (11A) :L1400-L1402

← 1 2 3 4 5 →