In situ observation of etching profile in inductively coupled plasma etching of GaAs and InP using long distance microscope

被引：0

作者：

Matsutani, Akihiro ^{[1
]}

Ohtsuki, Hideo ^{[2
]}

Koyama, Fumio ^{[1
]}

机构：

[1] Precision and Intelligence Lab., Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503

[2] Samco International Inc., 36 Waraya-Cho, Takeda, Fujimi-ku

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 2 A期

关键词：

Dry etching; GaAs; Inductively coupled plasma (ICP); InP; Long-distance microscope;

D O I：

10.1143/jjap.42.426

中图分类号：

学科分类号：

摘要：

We investigated the in situ observation of the etching profile in inductively coupled plasma etching of GaAs and InP, which enables real-time control of the etching profile and depth from outside the process chamber. The etching profile image of the line and space was obtained with a long-distance microscope. The image was almost the same as that obtained with a scanning electron microscope or a conventional optical microscope. We think that this proposed method is an important monitoring technique for real-time control in the dry etching process.

引用

页码：426 / 427

页数：1

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