共 50 条
- [1] In situ observation of etching profile in inductively coupled plasma etching of GaAs and InP using long distance microscope JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (2A): : 426 - 427
- [2] Measurement of plasma density for control of etching profile in inductively coupled plasma etching of InP JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (5A): : 3147 - 3148
- [3] Measurement of plasma density for control of etching profile in inductively coupled plasma etching of InP Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (5 A): : 3147 - 3148
- [4] Inductively coupled plasma etching of InP Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, 2007, 13 (03): : 276 - 280
- [5] Deep, vertical etching for GaAs using inductively coupled plasma/reactive ion etching JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020, 38 (01):
- [6] Iodine solid source inductively coupled plasma etching of InP JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19): : L576 - L577
- [7] Iodine solid source inductively coupled plasma etching of InP Japanese Journal of Applied Physics, Part 2: Letters, 2005, 44 (16-19): : 16 - 19
- [8] Etching of GaN using Inductively Coupled Plasma PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 272 - 275