Micropipe healing in liquid phase epitaxial growth of SiC

被引:0
作者
Yakimova, R. [1 ]
Syväjärvi, M. [1 ]
Rendakova, S. [2 ]
Dimitriev, V.A. [2 ,3 ]
Henry, A. [1 ]
Janzén, E. [1 ]
机构
[1] Dept. of Phys. and Msrmt. Technology, Linköping University, SE-581 83 Linköping, Sweden
[2] TDI, Inc., 8660 Dakota Drive, Gaithersburg, MD 20877, United States
[3] Howard University, MSRCE, Washington, DC, United States
关键词
D O I
暂无
中图分类号
学科分类号
摘要
10
引用
收藏
相关论文
共 50 条
  • [21] LIQUID-PHASE EPITAXIAL-GROWTH OF 6H-SIC BY VERTICAL DIPPING TECHNIQUE
    SUZUKI, A
    IKEDA, M
    MATSUNAMI, H
    TANAKA, T
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1741 - 1742
  • [22] LIQUID-PHASE EPITAXIAL-GROWTH OF SIC FROM TRANSITION-METAL SILICIDE SOLVENTS
    PELLEGRINI, PW
    FELDMAN, JM
    [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 320 - 324
  • [23] Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy
    Rendakova, SV
    Nikitina, IP
    Tregubova, AS
    Dmitriev, VA
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) : 292 - 295
  • [24] Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy
    S. V. Rendakova
    I. P. Nikitina
    A. S. Tregubova
    V. A. Dmitriev
    [J]. Journal of Electronic Materials, 1998, 27 : 292 - 295
  • [25] Growth of SiC from the liquid phase: wetting and dissolution of SiC
    Syvajarvi, M
    Yakimova, R
    Janzen, E
    [J]. DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1266 - 1268
  • [26] GROWTH OF UNIFORM EPITAXIAL LAYERS BY LIQUID-PHASE-EPITAXIAL METHOD
    BLUM, JM
    SHIH, KK
    [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1394 - &
  • [27] Growth of SiC from the liquid phase: Wetting and dissolution of SiC
    Dept. of Phys. and Msrmt. Technology, Linköping University, S-581 83 Linköping, Sweden
    不详
    [J]. Diamond Relat. Mat., 10 (1266-1268):
  • [28] Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density
    Tsuchida, H
    Kamata, I
    Izumi, S
    Tawara, T
    Jikimoto, T
    Miyanagi, T
    Nakamura, T
    Izumi, K
    [J]. SILICON CARBIDE 2004-MATERIALS, PROCESSING AND DEVICES, 2004, 815 : 35 - 46
  • [29] Growth of Six Inches SiC Single Crystals Without Micropipe Defect
    Zhang F.
    Yang K.
    Liu X.
    Lu Y.
    Niu X.
    Shang Y.
    Li T.
    [J]. Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society, 2021, 49 (04): : 736 - 742
  • [30] Interfacial properties in liquid phase growth of SiC
    Syväjärvi, M
    Yakimova, R
    Janzén, E
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (04) : 1565 - 1569